MACOM Inks GaN Process Transfer Agreement With AFRL
MACOM Technology Solutions has signed an agreement with the Air Force Research Laboratory to support a rapid process transfer of gallium nitride-on-silicon carbide technology.
The Cooperative Research and Development Agreement between the parties will facilitate the transfer of AFRL’s production ready 0.14 micron GaN-on-SiC semiconductor process to MACOM’s U.S. Trusted Foundry in Massachusetts.
The GaN-on-SiC process from the AFRL will be integrated into monolithic microwave integrated circuit products, delivering industry leading frequency and power density performance, MACOM said.
The semiconductor solutions supplier looks to expand its standard and custom MMIC product portfolio upon the completion of the process transfer.
Stephen Daly, president and chief executive officer at MACOM, said in a statement that the Massachusetts-based facility is well equipped to support the process transfer owing to investments in electron beam lithography capabilities.
He believes the semiconductor process will help the company offer high-performance products as it enters the microwave and millimeter wave GaN MMIC market. The goal is to address a wide range of commercial and defense applications, including satellite communication systems, as well as land-, air- and sea-based radar systems, Daly added.
AFRL Sensors Directorate’s Robert Fitch welcomed the opportunity to support MACOM with an "industrialized and best in class” GaN semiconductor process, citing the national importance of expanding domestic advanced semiconductor manufacturing.
Founded in 1950, MACOM specializes in manufacturing semiconductor products for data center, telecommunication, industrial and defense applications.
Category: Partnerships and Executive Moves
Tags: Cooperative Research and Development Agreement.Gallium Nitride-on-Silicon Carbide GaN-on-SiC MACOM Partnerships and Executive Moves process transfer Robert Fitch Stephen Daly U.S. Air Force